Preoperative planning of three axis intersection surgical laparoscopic arm system based on characteristic parameters.

PURPOSE: The application of robotics in the field of minimally invasive surgery solves some shortcomings of traditional minimally invasive surgery. Preoperative planning is an important prerequisite for the successful completion of robot-assisted surgery. The optimization of surgical incision position and the initial location of surgical robot are two important parts of preoperative planning. In this paper, a novel structure and preoperative planning method of a three-axis intersection surgical manipulator are proposed. METHODS: Firstly, a mathematical model of human abdominal wall was established. Three characteristic parameters between the lesion and the incision are defined and used to optimize the surgical incisions. Then, the spatial position relationship between the laparoscopic arm and the incision was analyzed to obtain the effective solution groups of each passive joint of the laparoscopic arm. Lastly, the optimal initial location of the laparoscopic arm was determined by taking the total joint variables of the telecentric mechanism as the optimization index. RESULTS: According to a given set of lesion parameters and the position of laparoscopic arm base, the optimal incision position was obtained using the surgical incision characteristic parameters and the optimal triangle criterion, and the positioning angles of the laparoscopic arm were optimized by using the Total Joint Variable (TJV) as the evaluation index. CONCLUSIONS: The proposed preoperative planning method is verified by simulation. The proposed method can realize the preoperative planning process of the three axis intersection laparoscopic arm. The proposed method of preoperative planning will provide important reference to improve the intelligence of robot-assisted surgery.

Smart Sensing Multifunctionalities Based on Barium Strontium Titanate Thin Films.

Sensors that have low power consumption, high scalability and the ability of rapidly detecting multitudinous external stimulus are of great value in cyber-physical interactive applications. Herein, we reported the fabrication of ferroelectric barium strontium titanate ((Ba70Sr30)TiO3, BST) thin films on silicon substrates by magnetron sputtering. The as-grown BST films have a pure perovskite structure and exhibit excellent ferroelectric characteristics, such as a remnant polarization of 2.4 µC/cm2, a ferro-to-paraelectric (tetragonal-to-cubic) phase transition temperature of 31.2 °C, and a broad optical bandgap of 3.58 eV. Capacitor-based sensors made from the BST films have shown an outstanding average sensitivity of 0.10 mV·Pa-1 in the 10-80 kPa regime and work extremely steadily over 1000 cycles. More importantly, utilizing the Pockels effect, optical manipulation in BST can be also realized by a smaller bias and its electro-optic coefficient reff is estimated to be 83.5 pmV-1, which is 2.6 times larger than in the current standard material (LiNbO3) for electro-optical devices. Our work established BST thin film as a powerful design paradigm toward on-chip integrations with diverse electronics into sensors via CMOS-comparable technique.

Momentarily trapped exciton polaron in two-dimensional lead halide perovskites.

Two-dimensional (2D) lead halide perovskites with distinct excitonic feature have shown exciting potential for optoelectronic applications. Compared to their three-dimensional counterparts with large polaron character, how the interplay between long- and short- range exciton-phonon interaction due to polar and soft lattice define the excitons in 2D perovskites is yet to be revealed. Here, we seek to understand the nature of excitons in 2D CsPbBr3 perovskites by static and time-resolved spectroscopy which is further rationalized with Urbach-Martienssen rule. We show quantitatively an intermediate exciton-phonon coupling in 2D CsPbBr3 where exciton polarons are momentarily self-trapped by lattice vibrations. The 0.25 ps ultrafast interconversion between free and self-trapped exciton polaron with a barrier of ~ 34 meV gives rise to intrinsic asymmetric photoluminescence with a low energy tail at room temperature. This study reveals a complex and dynamic picture of exciton polarons in 2D perovskites and emphasizes the importance to regulate exciton-phonon coupling.

Efficient hot-electron extraction in two-dimensional semiconductor heterostructures by ultrafast resonant transfer.

Energy loss from hot-carrier cooling sets the thermodynamic limit for the photon-to-power conversion efficiency in optoelectronic applications. Efficient hot-electron extraction before cooling could reduce the energy loss and leads to efficient next generation devices, which, unfortunately, is challenging to achieve in conventional semiconductors. In this work, we explore hot-electron transfer in two-dimensional (2D) layered semiconductor heterostructures, which have shown great potential for exploring new physics and optoelectronic applications. Using broadband micro-area ultrafast spectroscopy, we firmly established a type I band alignment in the WS2-MoTe2 heterostructure and ultrafast (∼60 fs) hot-electron transfer from photoexcited MoTe2 to WS2. The hot-electron transfer efficiency increases with excitation energy or excess energy as a result of a more favorable continuous competition between resonant electron transfer and cooling, reaching 90% for hot electrons with 0.3 eV excess energy. This study reveals exciting opportunities of designing extremely thin absorber and hot-carrier devices using 2D semiconductors and also sheds important light on the photoinduced interfacial process including charge transfer and generation in 2D heterostructures and optoelectronic devices.

Controlling Exciton and Valley Dynamics in Two-Dimensional Heterostructures with Atomically Precise Interlayer Proximity.

Two-dimensional (2D) materials and heterostructures with strong excitonic effect and spin/valley properties have emerged as an exciting platform for optoelectronic and spin/valleytronic applications. There, precise control of the exciton transformation process (including intralayer to interlayer exciton transition and recombination) and valley polarization process via structural tuning is crucial but remains largely unexplored. Here, using hexagonal boron nitride (BN) as an intermediate layer, we show the fine-tuning of exciton and valley dynamics in 2D heterostructures with atomic precision. Both interfacial electron and hole transfer rates decrease exponentially with increasing BN thickness, which can be well-described with quantum tunneling model. The increased spatial separation with BN intercalation weakens the electron-hole Coulomb interaction and significantly prolongs the interlayer exciton population and valley polarization lifetimes in van der Waals (vdW) heterostructures. For example, WSe2/WS2 heterostructures with monolayer BN intercalation exhibit a hole valley polarization lifetime of ∼60 ps at room temperature, which is approximately threefold and 3 orders of magnitude longer than that in WSe2/WS2 heterobilayer without BN and WSe2 monolayer, respectively. Considering a large family of layered materials, this study suggests a general approach to tailor and optimize exciton and valley properties in vdW heterostructures with atomic precision.

Highly efficient hot electron harvesting from graphene before electron-hole thermalization.

Although the unique hot carrier characteristics in graphene suggest a new paradigm for hot carrier-based energy harvesting, the reported efficiencies with conventional photothermoelectric and photothermionic emission pathways are quite low because of inevitable hot carrier thermalization and cooling loss. Here, we proposed and demonstrated the possibility of efficiently extracting hot electrons from graphene after carrier intraband scattering but before electron-hole interband thermalization, a new regime that has never been reached before. Using various layered semiconductors as model electron-accepting components, we generally observe ultrafast injection of energetic hot electrons from graphene over a very broad photon energy range (visible to mid-infrared). The injection quantum yield reaches as high as ~50%, depending on excitation energy but remarkably, not on fluence, in notable contrast with conventional pathways with nonlinear behavior. Hot electron harvesting in this regime prevails over energy and carrier loss and closely resembles the concept of hot carrier solar cell.

Dielectric Environment-Robust Ultrafast Charge Transfer Between Two Atomic Layers.

Understanding electron transfer across two-dimensional (2D) van der Waals (vdW) interfaces especially the effect of dielectric environment not only contributes to the rational design of high performance optoelectronic and photo/electrocatalytic devices but also unravels the nature of charge motion. Herein, we investigated the electron transfer process between two atomic thin layered materials coupled by vdW force at ultimate proximity. Despite their susceptible electronic properties, we show electron transfer at 2D vdW interface is robust and ultrafast (∼30 fs), regardless of the surrounding dielectrics and solvents. Considering the static energy landscape and dynamic nuclear rearrangements, our result suggests the electronic coupling at 2D vdW heterointerfaces is sufficiently strong such that electron transfers adiabatically in a barrierless and ultrafast manner where energetics and solvent relaxation are not that relevant. The robust ultrafast electron transfer against the variation of dielectric environment is highly encouraging for 2D optoelectronic and photo/electrocatalytic devices.